Pregled bibliografske jedinice broj: 508193
X-ray characterization of semiconductor nanostructures
X-ray characterization of semiconductor nanostructures // Semiconductor science and technology, 26 (2011), 6; 064002, 7 doi:10.1088/0268-1242/26/6/064002 (međunarodna recenzija, članak, znanstveni)
Naslov
X-ray characterization of semiconductor nanostructures
Autori
Holy, Vaclav ; Buljan, Maja ; Lechner, Rainer
Izvornik
Semiconductor science and technology (0268-1242) 26
(2011), 6;
064002, 7
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
X-ray scattering ; nanocrystals ; defects and impurities:doping ; implantation ; distribution ; concentration ; etc.
Sažetak
Theoretical description of x-ray scattering from nanostructures is briefly summarized. The application of x-ray scattering for the investigation of the structure of nanocrystals is demonstrated by two characteristic examples comprising standard small-angle x-ray scattering from nanocrystals in an amorphous matrix and x-ray diffraction from crystalline inclusions in an epitaxial layer. New synchrotron-based x-ray scattering methods are briefly discussed.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekt / tema
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )
Ustanove
Institut "Ruđer Bošković", Zagreb
Autor s matičnim brojem:
Maja Buljan, (242416)
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus