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Pregled bibliografske jedinice broj: 508193

X-ray characterization of semiconductor nanostructures


Holy, Vaclav; Buljan, Maja; Lechner, Rainer
X-ray characterization of semiconductor nanostructures // Semiconductor science and technology, 26 (2011), 6; 064002, 7 doi:10.1088/0268-1242/26/6/064002 (međunarodna recenzija, članak, znanstveni)


Naslov
X-ray characterization of semiconductor nanostructures

Autori
Holy, Vaclav ; Buljan, Maja ; Lechner, Rainer

Izvornik
Semiconductor science and technology (0268-1242) 26 (2011), 6; 064002, 7

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
X-ray scattering ; nanocrystals ; defects and impurities:doping ; implantation ; distribution ; concentration ; etc.

Sažetak
Theoretical description of x-ray scattering from nanostructures is briefly summarized. The application of x-ray scattering for the investigation of the structure of nanocrystals is demonstrated by two characteristic examples comprising standard small-angle x-ray scattering from nanocrystals in an amorphous matrix and x-ray diffraction from crystalline inclusions in an epitaxial layer. New synchrotron-based x-ray scattering methods are briefly discussed.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Autor s matičnim brojem:
Maja Buljan, (242416)

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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