Electrical characterisation of Si-SiO2 structures (CROSBI ID 170027)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Capan, Ivana ; Pivac, Branko ; Slunjski, Robert
engleski
Electrical characterisation of Si-SiO2 structures
The possibility of studying the Si-SiO2 structures by means of deep level transient spectroscopy (DLTS) has been presented. Contrary to the standard application of this technique, the temperature interval has to be reduced. In order to minimize the influence, and possible errors due to the capacitance base line shift and the Fermi level pinning, C-V characterization at different temperatures is crucial prior the DLTS measurement. The interface traps related to the Pb centers, distributed around 0.35 eV below the conduction band, have been observed.
silicon ; oxide ; interface ; DLTS
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
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Podaci o izdanju
8 (3)
2011.
816-818
objavljeno
1862-6351
10.1002/pssc.201000076