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Electrical characterisation of Si-SiO2 structures (CROSBI ID 170027)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Capan, Ivana ; Pivac, Branko ; Slunjski, Robert Electrical characterisation of Si-SiO2 structures // Physica status solidi. C, Current topics in solid state physics, 8 (2011), 3; 816-818. doi: 10.1002/pssc.201000076

Podaci o odgovornosti

Capan, Ivana ; Pivac, Branko ; Slunjski, Robert

engleski

Electrical characterisation of Si-SiO2 structures

The possibility of studying the Si-SiO2 structures by means of deep level transient spectroscopy (DLTS) has been presented. Contrary to the standard application of this technique, the temperature interval has to be reduced. In order to minimize the influence, and possible errors due to the capacitance base line shift and the Fermi level pinning, C-V characterization at different temperatures is crucial prior the DLTS measurement. The interface traps related to the Pb centers, distributed around 0.35 eV below the conduction band, have been observed.

silicon ; oxide ; interface ; DLTS

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Podaci o izdanju

8 (3)

2011.

816-818

objavljeno

1862-6351

10.1002/pssc.201000076

Povezanost rada

Fizika

Poveznice
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