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izvor podataka: crosbi

Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix (CROSBI ID 169759)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Vieira, Eliana M.F. ; Pinto, Sara R.C. ; Levichev, Sergey ; Rolo, A.G. ; Chahboun A. ; Buljan, Maja ; Barradas, N.P. ; Alves E. ; Bernstorff, Sigrid ; Conde, O. et al. Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix // Microelectronic engineering, 88 (2011), 4; 509-513. doi: 10.1016/j.mee.2010.10.016

Podaci o odgovornosti

Vieira, Eliana M.F. ; Pinto, Sara R.C. ; Levichev, Sergey ; Rolo, A.G. ; Chahboun A. ; Buljan, Maja ; Barradas, N.P. ; Alves E. ; Bernstorff, Sigrid ; Conde, O. ; Gomes, Maria J.M. ;

engleski

Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix

Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RFmagnetron sputtering technique with following annealing procedure at 800 oC, in nitrogen atmosphere. The presence of Si1-xGex NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS) and Raman spectroscopy. The influence of the growth conditions on the structural properties and composition of Si1-xGex NCs inside the alumina matrix was analyzed. Optimal conditions to grow Si1-xGex (x= 0.8) NCs sized between 3 and 4 nm in Al2O3 matrix were established.

semiconductors ; magnetron sputtering ; Si1-xGex nanocrystals ; mulite ; GIXRD ; Raman scattering ; GISAXS

Rad je prezentiran na skupu Post-Si-CMOS electronic devices : the role of Ge and III-V materials, održanom od 07.-11.06.2010., Strasbourg, Francuska ; A. Molle, G. Brammertz, A. Dimoulus, Ch. Marchiori (ur.)

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Podaci o izdanju

88 (4)

2011.

509-513

objavljeno

0167-9317

1873-5568

10.1016/j.mee.2010.10.016

Povezanost rada

Fizika

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