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Pregled bibliografske jedinice broj: 503564

Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix


Vieira, Eliana M.F.; Pinto, Sara R.C.; Levichev, Sergey; Rolo, A.G.; Chahboun A.; Buljan, Maja; Barradas, N.P.; Alves E.; Bernstorff, Sigrid; Conde, O. et al.
Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix // Microelectronic engineering, 88 (2011), 4; 509-513 doi:10.1016/j.mee.2010.10.016 (međunarodna recenzija, članak, znanstveni)


Naslov
Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix

Autori
Vieira, Eliana M.F. ; Pinto, Sara R.C. ; Levichev, Sergey ; Rolo, A.G. ; Chahboun A. ; Buljan, Maja ; Barradas, N.P. ; Alves E. ; Bernstorff, Sigrid ; Conde, O. ; Gomes, Maria J.M. ;

Izvornik
Microelectronic engineering (0167-9317) 88 (2011), 4; 509-513

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Semiconductors ; magnetron sputtering ; Si1-xGex nanocrystals ; mulite ; GIXRD ; Raman scattering ; GISAXS

Sažetak
Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RFmagnetron sputtering technique with following annealing procedure at 800 oC, in nitrogen atmosphere. The presence of Si1-xGex NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS) and Raman spectroscopy. The influence of the growth conditions on the structural properties and composition of Si1-xGex NCs inside the alumina matrix was analyzed. Optimal conditions to grow Si1-xGex (x= 0.8) NCs sized between 3 and 4 nm in Al2O3 matrix were established.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

Napomena
Rad je prezentiran na skupu Post-Si-CMOS electronic devices : the role of Ge and III-V materials, održanom od 07.-11.06.2010., Strasbourg, Francuska ; A. Molle, G. Brammertz, A. Dimoulus, Ch. Marchiori (ur.)



POVEZANOST RADA


Projekt / tema
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Autor s matičnim brojem:
Maja Buljan, (242416)

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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