Band-to-Band Tunneling Related Effects in a Thin MOS Structure (CROSBI ID 570571)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Vexler, Mikhail ; Shulekin, Alexander ; Grgec, Dalibor ; Grekhov, Igor ; Meinerzhagen, Bernd
engleski
Band-to-Band Tunneling Related Effects in a Thin MOS Structure
The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 1018-1019 cm¡3 with an 2-3 nm oxide, is studied theoretically. The BBT is shown to supply the minority carriers toward the Si=SiO2 interface. This effect can support the inversion layer in the nonequilibrium and modify the I-V and C-V curves.
band-to-band tunneling; MOS; oxide; minority; inversion layer
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Podaci o prilogu
2003.
objavljeno
Podaci o matičnoj publikaciji
Barcelona:
Podaci o skupu
Proceedings of the 13th Biannual Conference on Insulating Films on Semiconductors - INFOS
predavanje
18.06.2003-20.06.2003
Barcelona, Španjolska