A Methodology for Consistent MC, HD and DD Simulations of Submicrometer NMOSFETs (CROSBI ID 570563)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Jungemann, Christoph ; Grgec, Dalibor ; Meinerzhagen, Bernd
engleski
A Methodology for Consistent MC, HD and DD Simulations of Submicrometer NMOSFETs
The accuracy of classical numerical device simulation (HD, DD) is questionable for nanometer scale MOSFETs. Full Band Monte- Carlo Device Simulation can serve as a physical reference for accessing the HD, DD modeling accuracy by comparing the modeling results. However all models (MC, HD, DD) need to be as consistent as possible to make such a comparison meaningful. Therefore a methodology for achieving a consistent comparison of MC, HD, DD models in the case of nanometer scale NMOSFETs is outlined in this paper.
numerical device simulation; DD; HD; MC; Full Band Monte-Carlo; NMOS
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Podaci o prilogu
14-17.
2001.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of MIPRO/MEET 2001
Petar, Biljanović
Opatija: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO
Podaci o skupu
MIPRO
predavanje
22.05.2001-24.05.2001
Opatija, Hrvatska