Effects of low-temperature annealing on polycrystalline silicon for solar cells (CROSBI ID 168237)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Slunjski, Robert ; Capan, Ivana ; Pivac, Branko ; Le Donne, Alessia ; Binetti, Simona ;
engleski
Effects of low-temperature annealing on polycrystalline silicon for solar cells
The polycrystalline silicon material grown by the edge-defined film-fed growth technique, and often used in solar cell production, is known to be carbon and dislocation rich. Aim of this work was to explore the effect of low-temperature annealing in vacuum on properties of these structural defects, often present in different solar-grade materials. Electrical measurements by deep level transient spectroscopy revealed the presence of the defects typically found in dislocated silicon. Detailed analysis further suggested that they are also carbon related, exhibiting quite unexpected behavior at such lowtemperature annealing. Moreover, photoluminescence results showed electron–hole droplet condensation at dislocations after such low-temperature annealing. This further supports the hypothesis that point defects are incorporated at dislocation cores rather than in a cloud at its proximity.
silicon ; defects ; dislocations ; DLTS ; photoluminescence ; solar cells
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Podaci o izdanju
95 (2)
2011.
559-563
objavljeno
0927-0248
1879-3398
10.1016/j.solmat.2010.09.016