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Decoration of nitrogen vacancies by oxygen atoms in boron nitride nanotubes (CROSBI ID 569479)

Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija

Petravić, Mladen ; Peter, Robert ; Kavre, Ivna ; Li, Lu Hua ; Chen, Ying ; Fan, Lian-Jeng ; Yang, Yaw-Wen Decoration of nitrogen vacancies by oxygen atoms in boron nitride nanotubes // Proceedings of 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 / Tan, Hoe (ur.). Canberra: Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 217-218

Podaci o odgovornosti

Petravić, Mladen ; Peter, Robert ; Kavre, Ivna ; Li, Lu Hua ; Chen, Ying ; Fan, Lian-Jeng ; Yang, Yaw-Wen

engleski

Decoration of nitrogen vacancies by oxygen atoms in boron nitride nanotubes

Decoration of nitrogen vacancies by oxygen atoms has been studied by near-edge x-ray absorption fine structure (NEXAFS) around B K-edge in several boron nitride (BN) structures, including bamboo-like and multi-walled BN nano-tubes. Breaking of B-N bonds and formation of nitrogen vacancies under low-energy ion bombardment reduces oxidation resistance of BN structures and promotes an efficient oxygen- healing mechanism, in full agreement with some recent theoretical predictions. The forma-tion of mixed O-B-N and B- O bonds is clearly identified by well resolved peaks in NEXAFS spectra of excited boron atoms.

BN NEXAFS; nitrogen vacancies

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Podaci o prilogu

217-218.

2010.

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objavljeno

978-1-4244-7332-8

Podaci o matičnoj publikaciji

Proceedings of 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Tan, Hoe

Canberra: Institute of Electrical and Electronics Engineers (IEEE)

Podaci o skupu

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

predavanje

12.12.2010-15.12.2010

Canberra, Australija

Povezanost rada

Fizika