Decoration of nitrogen vacancies by oxygen atoms in boron nitride nanotubes (CROSBI ID 569479)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Petravić, Mladen ; Peter, Robert ; Kavre, Ivna ; Li, Lu Hua ; Chen, Ying ; Fan, Lian-Jeng ; Yang, Yaw-Wen
engleski
Decoration of nitrogen vacancies by oxygen atoms in boron nitride nanotubes
Decoration of nitrogen vacancies by oxygen atoms has been studied by near-edge x-ray absorption fine structure (NEXAFS) around B K-edge in several boron nitride (BN) structures, including bamboo-like and multi-walled BN nano-tubes. Breaking of B-N bonds and formation of nitrogen vacancies under low-energy ion bombardment reduces oxidation resistance of BN structures and promotes an efficient oxygen- healing mechanism, in full agreement with some recent theoretical predictions. The forma-tion of mixed O-B-N and B- O bonds is clearly identified by well resolved peaks in NEXAFS spectra of excited boron atoms.
BN NEXAFS; nitrogen vacancies
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
217-218.
2010.
nije evidentirano
objavljeno
978-1-4244-7332-8
Podaci o matičnoj publikaciji
Proceedings of 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Tan, Hoe
Canberra: Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
predavanje
12.12.2010-15.12.2010
Canberra, Australija