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N-channel MOSFETs Fabricated on Self-Assembled SiGe Dots for Strain-Enhanced Mobility

The dots of SiGe are grown in a Stranski-Krastanow mode in regular arrays and are used as sources of biaxial tensile strain in the Si layer grown over them. N-channel MOSFETs are fabricated with the channel region in the top Si layer over the SiGe dot in order to investigate mobility enhancement as a result of the strain imparted by the underlying SiGe dot. A dedicated fabrication process is developed with the maximum processing temperature after the growth of the dot structure of 400 ºC and ultrashallow source/drain junctions selfaligned to the gate formed by ion implantation and excimer-laser annealing. The comparison with the reference FETs processed in parallel shows the increase of drain current of up to 22.5 %.

CMOS; excimer-laser annealing (ELA); low-temperature gate stack; SiGe; strain-enhanced mobility; Stranski– Krastanow (S–K) growth mode; ultrashallow source/drain junctions

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