engleski

MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility

Silicon-germanium dots grown in the Stranski- Krastanow mode are investigated as sources of strain for electron mobility enhancement in the silicon capping layer. N-channel MOSFETs with the channel in the Si cap-layer over the SiGe dot (DotFETs) are fabricated in a custom-made process and have an average increase in drain current of up to 22.5% compared to the reference devices. The sources of device variations related to the dimensions of the main gate-segment are identified and their influence on device performance evaluated, confirming the mobility enhancement.

CMOS; excimer-laser annealing (ELA); low-temperature gate stack; SiGe; strain-enhanced mobility; Stranski– Krastanow (S–K) growth mode; ultrashallow source/drain junctions

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