engleski

Al-mediated Solid-Phase Epitaxy of Silicon-On- Insulator

Silicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al- mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred-of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (100)-Si substrate and have the ability to merge seamlessly over the oxide.

silicon-on-insulator; solid-phase epitaxy; aluminum mediated

nije evidentirano