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Pregled bibliografske jedinice broj: 489922

Numerical model for simulation of transport and recombination in OLEDs


Masenelli, B.; Tutiš, E.; Bussac, M.N; and Zuppiroli, L.
Numerical model for simulation of transport and recombination in OLEDs // Synthetic metals, 121 (2001), 1-3; 1513-1514 doi:10.1016/S0379-6779(00)01138-3 (međunarodna recenzija, članak, znanstveni)


Naslov
Numerical model for simulation of transport and recombination in OLEDs

Autori
Masenelli, B. ; Tutiš, E. ; Bussac, M.N ; and Zuppiroli, L.

Izvornik
Synthetic metals (0379-6779) 121 (2001), 1-3; 1513-1514

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Multilayer ; OLED ; numerical model ; recombination ; LiF

Sažetak
We present a recently developed numerical code for OLED simulation. This code contains a detailed description of contacts, charge transport and recombination. The route towards the simulation of a complex multilayer device is detailed through examples of single-layer and bilayer devices simulations as well as through the investigation of the action of LiF thin film on injection.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

Napomena
16th International Conference on Science and Technology of Synthetic Metals (ICSM 2000)



POVEZANOST RADA


Ustanove
Institut za fiziku, Zagreb

Autor s matičnim brojem:
Eduard Tutiš, (18035)

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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