2-D front- and back-gate potential distribution model of submicrometer VFD SONFET (CROSBI ID 567769)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Sviličić, Boris ; Jovanović, Vladimir ; Suligoj, Tomislav
engleski
2-D front- and back-gate potential distribution model of submicrometer VFD SONFET
Analytical model for the 2D front-gate and the back-gate surface potential distribution of vertical fully depleted (VFD) silicon-on-nothing (SON) FET is developed. The analytical expressions of the front-gate and the back-gate potential distributions are derived by solving 2-D Poisson's equation using boundary conditions that are special for the VFD SONFET and assuming a second-order polynomial function for the potential distribution in the device body. The accuracy of the model is verified by comparing the model predictions with the 2-D numerical device simulation results obtained using Medici and very good agreement is obtained.
analytical modeling; potential distribution; vertical SONFET
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Podaci o prilogu
69-73.
2010.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 33rd International Convention MIPRO
Biljanović, Petar ; Skala, Karolj
Zagreb: Denona
Podaci o skupu
33rd International Convention on Information and Communication Technology, Electronics and Microelectronics - MIPRO
predavanje
24.05.2010-28.05.2010
Opatija, Hrvatska