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2-D front- and back-gate potential distribution model of submicrometer VFD SONFET (CROSBI ID 567769)

Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija

Sviličić, Boris ; Jovanović, Vladimir ; Suligoj, Tomislav 2-D front- and back-gate potential distribution model of submicrometer VFD SONFET // Proceedings of the 33rd International Convention MIPRO / Biljanović, Petar ; Skala, Karolj (ur.). Zagreb: Denona, 2010. str. 69-73

Podaci o odgovornosti

Sviličić, Boris ; Jovanović, Vladimir ; Suligoj, Tomislav

engleski

2-D front- and back-gate potential distribution model of submicrometer VFD SONFET

Analytical model for the 2D front-gate and the back-gate surface potential distribution of vertical fully depleted (VFD) silicon-on-nothing (SON) FET is developed. The analytical expressions of the front-gate and the back-gate potential distributions are derived by solving 2-D Poisson's equation using boundary conditions that are special for the VFD SONFET and assuming a second-order polynomial function for the potential distribution in the device body. The accuracy of the model is verified by comparing the model predictions with the 2-D numerical device simulation results obtained using Medici and very good agreement is obtained.

analytical modeling; potential distribution; vertical SONFET

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Podaci o prilogu

69-73.

2010.

objavljeno

Podaci o matičnoj publikaciji

Proceedings of the 33rd International Convention MIPRO

Biljanović, Petar ; Skala, Karolj

Zagreb: Denona

Podaci o skupu

33rd International Convention on Information and Communication Technology, Electronics and Microelectronics - MIPRO

predavanje

24.05.2010-28.05.2010

Opatija, Hrvatska

Povezanost rada

Elektrotehnika