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Pregled bibliografske jedinice broj: 484890

Multilayers of Ge nanocrystals embedded in Al2O3 matrix : Structural and electrical studies


Pinto, S.R.C.; Rolo, A.G.; Chahboun, A.; Buljan, Maja; Khodorov, A.; Kashtiban, R.J.; Bangert, U.; Barradas, N.P.; Alves, E.; Bernstorff, S.; Gomes, M.J.M.
Multilayers of Ge nanocrystals embedded in Al2O3 matrix : Structural and electrical studies // Microelectronic engineering, 87 (2010), 12; 2508-2512 doi:10.1016/j.mee.2010.06.002 (međunarodna recenzija, članak, znanstveni)


Naslov
Multilayers of Ge nanocrystals embedded in Al2O3 matrix : Structural and electrical studies

Autori
Pinto, S.R.C. ; Rolo, A.G. ; Chahboun, A. ; Buljan, Maja ; Khodorov, A. ; Kashtiban, R.J. ; Bangert, U. ; Barradas, N.P. ; Alves, E. ; Bernstorff, S. ; Gomes, M.J.M.

Izvornik
Microelectronic engineering (0167-9317) 87 (2010), 12; 2508-2512

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Ge nanocrystals ; laser ablation ; GISAXS ; TEM ; RBS

Sažetak
In this paper, Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I–V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Autor s matičnim brojem:
Maja Buljan, (242416)

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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