engleski

Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces

Influence of downscaling of body thickness on electron mobility in double-gate MOSFETs with ultra-thin body is investigated for (100) and (111) orientations of the active surface. Effective mass approximation is used in our Schrödinger-Poisson solver while momentum relaxation time approximation is used for the calculation of electron scattering rates. Intravalley acoustic, intervalley optical and surface-roughness scattering is included in our simulations. Behavior of electron mobility is investigated by examination of form-factors, ladder and subband repopulation effects and field-induced perturbations. Compared to (100) devices, (111)-oriented UTB double-gate MOSFETs exhibit mobility enhancement for body thickness of approximately 8 nm and only at high inversion charge densities.

double-gate MOSFET; Si (100); Si (111); physics-based modeling; quantum modeling; mobility

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