engleski

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Influence of different active surface orientations and fin-width scaling on electron and hole mobility in ultra-thin body FinFETs is examined. Results of mobility modeling are validated on experimental data, including (111)-oriented FinFETs from our previous work which are here proven to exhibit no mobility degradation caused by fin-width fluctuations. We show that (111)-oriented FinFETs are the optimum solution when performance and layout area of 6T SRAM cell are concerned, since they enable SRAM with a minimum number of fins per cell.

ultra-thin body; FinFET; electron mobility; hole mobility; quantum confinement; physics-based modeling; SRAM

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