engleski

A comparative study of self ordering growth of silicon and germanium quantum dots in amorphous matrix

A comparative study of self-ordering growth of germanium and silicon quantum dots in amorphous silica matrix is presented. The self-ordering is driven by surface morphology mechanism during the (Ge+SiO2)/SiO2 and (Si+SiO2)/SiO2 multilayer growth. We show a dependence of the regularity in quantum dot positions and of the size distribution of the Ge and Si dots on their deposition parameters. The obtained results demonstrate that self-ordering and higher degree of regularity of the positions of quantum dots is much easily achieved in the germanium quantum dot multilayers. This phenomenon is explained and simulated by a Monte-Carlo model which is based on diffusion mediated nucleation and an influence of the surface morphology on the local diffusion of adatoms.

germanium; silicon; quantum dots; selfordering; SAXS

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