engleski

Ultra-high aspect-ratio FinFET technology

FinFETs with ultra-large height-to-width ratio have been processed on (1 1 0) bulk silicon wafers by employing crystallographic etching of silicon with TMAH, which results in nearly vertical sidewalls with a (1 1 1)/<1 1 2> surface orientation. Tall fins, which corresponds to wide transistor channels per single fin offer more efficient use of the silicon area and improved performance for multi-fin devices in high- frequency analog applications. N-channel FinFETs with 1.9-nm-wide fins demonstrate the downscaling potential of the technology and devices with a height of the active part of the fin of 625 nm have the largest aspect-ratio of the fins reported thus far. Both devices with highly and moderately scaled fin-widths exhibit excellent subthreshold performance while electrons have higher mobility in 15-nm-wide FinFETs, which gives them larger on- state currents. The comparison between FinFETs and wide tri-gate devices shows that FinFETs have better current drivability in this simple process, even with larger source/drain series resistances. The differences in threshold voltage and low-field electron mobility between 1.9-nm-wide and 15-nm- wide FinFETs have been related to the increase in subband energies due to carrier confinement in the extremely narrow fins.

CMOS; FinFET; TMAH; (1 1 1) Channel; Carrier confinement

U sveščiću 9 objavljeni su odabrani radovi prezentirani na skupu ESSDERC 2009 Conference.