Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations (CROSBI ID 563738)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
engleski
Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations
A comprehensive study of low-field phonon-limited mobility behavior with downscaling of silicon body thickness in ultrathin-body SOI MOSFETs and double-gate MOSFETs is presented. Phonon-limited mobility is obtained by self-consistent Schrödinger-Poisson simulations and momentum relaxation rate calculations. Single- and double-gate devices with (100), (110) and (111) active surfaces and body thickness down to 2 nm are investigated. Physical mechanisms which govern mobility behavior are studied by calculating form factors and ladder/subband occupancy.
mobility; phonon scattering; quantum confinement; ultra-thin body; double-gate MOSFET
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Podaci o prilogu
74-79.
2010.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS
Biljanović, Petar ; Skala, Karolj
Zagreb: Denona
978-953-233-051-9
Podaci o skupu
33rd International Convention on Information and Communication Technology, Electronics and Microelectronics - MIPRO
predavanje
24.05.2010-28.05.2010
Opatija, Hrvatska