Method based on the extended Ramo theorem to interpret charge collection efficiency profiles as determined by lateral IBICC (CROSBI ID 475180)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa
Podaci o odgovornosti
Vittone, E. ; Fizzotti, F. ; Sanfilippo, C. ; Manfredotti, C. ; Jakšić, Milko
engleski
Method based on the extended Ramo theorem to interpret charge collection efficiency profiles as determined by lateral IBICC
An efficient method for calculating charge collection profiles in semiconductor devices as determined by lateral IBICC measurements is presented. The method is based on the extended Shockley-Ramo theorem that providess a rigorous mathematical tool for the calculation of the induced charge under the assumption of a quasi-steady state operation of the semiconductor device.
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Podaci o prilogu
82-x.
2000.
objavljeno
Podaci o matičnoj publikaciji
7th International Conference on Nuclear Microprobe Technology and Applications, Final Program and Abstracts
Bordeaux: ICNMTA 2000
Podaci o skupu
7th International Conference on Nuclear Microprobe Technology and Applications
poster
10.09.2000-15.09.2000
Bordeaux, Francuska