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Application of Laser Annealing in the EU FP6 Project D-DotFET

Full-melt high-power excimer laser annealing is investigated as a means of activating implanted source/drain regions in a MISFET structure, which could be positioned on a SiGe dot in such a manner that strain is transferred to the channel region. Such a “DotFET” device is the focus of the EU FP6 project DDotFET. A MISFET structure fabricated at suitably low processing temperatures, below 400C, is demonstrated with a metal/high-k gate-stack that is self-aligned to laser-annealed S/D regions.

Ge-Si alloys; MISFET; excimer lasers; field effect transistors; laser beam annealing; semiconductor quantum dots

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