engleski

Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs

Behavior of electron mobility with downscaling of fin width in double- and triple-gate SOI FinFETs is analyzed by self-consistent numerical calculations. Double-gate FinFETs with (100), (110) and (111) active surfaces, and triple-gate FinFETs on (100) wafers with [100] or [110] sidewalls, and on (110) wafers with [111] sidewalls, are compared.

electron mobility; quantum confinement; quantum modeling; FinFET; double-gate; triple-gate

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