Observed similar behaviour of a-Si:H p-i-n photodiode and retina response (CROSBI ID 559114)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Gradišnik, Vera
engleski
Observed similar behaviour of a-Si:H p-i-n photodiode and retina response
Epiretinal and subretinal prosthesis implants, composed mostly of silicon CMOS neuromorphic chips have recently been proposed. In this paper, we present measurements that detail the similarities between some mammillae retinal responses, monitored by electroretinography (ERG) and those of a-Si:H p-i-n photodiode (PD) response. The PD response on simultaneous voltage and light pulses has a similar shape as retinal layers response. The characteristic shape of PD response, ascribed here to trap states, is analyzed. The optimal parameters (amplitude, duration, waveform and frequency) and threshold voltages of the a-Si:H p- i-n photodiode responses were identified. The voltage pulse influence on photodiode response can be compared with activities of bipolar cells in retinal response. Previously described PD behaviour suggests potential use of a-Si:H p-i-n PD as active pixel in retinal implant.
a-Si:H; defects; photodiode; ERG; retina
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
176-180.
2010.
objavljeno
Podaci o matičnoj publikaciji
Proceeding of the Seventh IASTED International Conference on Biomedical Engineering
Hierlemann, Andreas
Innsbruck: International Association of Science and Technology for Development (IASTED)
978-0-88986-826-7
Podaci o skupu
7th IASTED International Conference on Biomedical Engineering (BioMed 2010)
predavanje
17.02.2010-19.02.2010
Innsbruck, Austrija