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Pregled bibliografske jedinice broj: 444785

Structural study of Si1-x Gex nanocrystals embedded in SiO2 films


Pinto, S.R.C.; Kashtiban, R.J.; Rolo, A.G.; Buljan, Maja; Chahboun, A.; Bangert, U.; Barradas, N.P.; Khodorov, A.; Alves, E.; Gomes, M.J.M.
Structural study of Si1-x Gex nanocrystals embedded in SiO2 films // Thin solid films, 518 (2010), 9; 2569-2572 doi:10.1016/j.tsf.2009.09.148 (međunarodna recenzija, članak, znanstveni)


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Naslov
Structural study of Si1-x Gex nanocrystals embedded in SiO2 films

Autori
Pinto, S.R.C. ; Kashtiban, R.J. ; Rolo, A.G. ; Buljan, Maja ; Chahboun, A. ; Bangert, U. ; Barradas, N.P. ; Khodorov, A. ; Alves, E. ; Gomes, M.J.M.

Izvornik
Thin solid films (0040-6090) 518 (2010), 9; 2569-2572

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Si1-xGex ; nanocrystals ; SiO2 ; HRTEM ; GISAXS ; Raman ; Flash memory ; semiconductor

Sažetak
We have investigated the structural properties of Si1-xGex nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystals size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si1-xGex nanocrystals with average sizes between 3 to 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( POIROT)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Maja Mičetić (autor)

Poveznice na cjeloviti tekst rada:

doi www.sciencedirect.com doi.org

Citiraj ovu publikaciju:

Pinto, S.R.C.; Kashtiban, R.J.; Rolo, A.G.; Buljan, Maja; Chahboun, A.; Bangert, U.; Barradas, N.P.; Khodorov, A.; Alves, E.; Gomes, M.J.M.
Structural study of Si1-x Gex nanocrystals embedded in SiO2 films // Thin solid films, 518 (2010), 9; 2569-2572 doi:10.1016/j.tsf.2009.09.148 (međunarodna recenzija, članak, znanstveni)
Pinto, S., Kashtiban, R., Rolo, A., Buljan, M., Chahboun, A., Bangert, U., Barradas, N., Khodorov, A., Alves, E. & Gomes, M. (2010) Structural study of Si1-x Gex nanocrystals embedded in SiO2 films. Thin solid films, 518 (9), 2569-2572 doi:10.1016/j.tsf.2009.09.148.
@article{article, author = {Pinto, S.R.C. and Kashtiban, R.J. and Rolo, A.G. and Buljan, Maja and Chahboun, A. and Bangert, U. and Barradas, N.P. and Khodorov, A. and Alves, E. and Gomes, M.J.M.}, year = {2010}, pages = {2569-2572}, DOI = {10.1016/j.tsf.2009.09.148}, keywords = {Si1-xGex, nanocrystals, SiO2, HRTEM, GISAXS, Raman, Flash memory, semiconductor}, journal = {Thin solid films}, doi = {10.1016/j.tsf.2009.09.148}, volume = {518}, number = {9}, issn = {0040-6090}, title = {Structural study of Si1-x Gex nanocrystals embedded in SiO2 films}, keyword = {Si1-xGex, nanocrystals, SiO2, HRTEM, GISAXS, Raman, Flash memory, semiconductor} }
@article{article, author = {Pinto, S.R.C. and Kashtiban, R.J. and Rolo, A.G. and Buljan, Maja and Chahboun, A. and Bangert, U. and Barradas, N.P. and Khodorov, A. and Alves, E. and Gomes, M.J.M.}, year = {2010}, pages = {2569-2572}, DOI = {10.1016/j.tsf.2009.09.148}, keywords = {Si1-xGex, nanocrystals, SiO2, HRTEM, GISAXS, Raman, Flash memory, semiconductor}, journal = {Thin solid films}, doi = {10.1016/j.tsf.2009.09.148}, volume = {518}, number = {9}, issn = {0040-6090}, title = {Structural study of Si1-x Gex nanocrystals embedded in SiO2 films}, keyword = {Si1-xGex, nanocrystals, SiO2, HRTEM, GISAXS, Raman, Flash memory, semiconductor} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati:





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