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Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility

For the first time, mobility enhancement due to quantum confinement effects is reported in (111)-oriented UTB DG MOSFETs with TSi between 6 and 8 nm for Eeff of 1 and 0.3 MV/cm, respectively. When compared to (100)- and (110)-oriented UTB DG devices, (111)-devices reach maximum mobility at higher TSi which benefits the fabrication and makes them less susceptible to δTSi-induced scattering. The results presented here encourage the utilization of UTB FinFETs on (110)-substrate with (111)-oriented vertical sides.

quantum modeling; phonon scattering; mobility; ultra-thin body; double-gate MOSFET

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