engleski

Band-to-band Tunneling Related Effects in a Thin MOS Structure

The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 10^18-10^19 cm−3 with an 2-3 nm oxide is studied theoretically. The BBT is shown to supply the minority carriers toward the Si/SiO2 interface. This effect can support the inversion layer in the non-equilibrium and modify the I-V and C-V curves. The experimental data on MOS diodes, supporting the theory, are also presented.

tunneling; band-to-band; MOS; inversion layer; C-V curves; I-V curves

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