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Pregled bibliografske jedinice broj: 433815

Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix


Buljan, Maja; Pinto Sara; Kashtiban, Reza J.; Rolo, Anabela G.; Chahboun, A.; Bangert, Ursel; Levichev, Sergey; Holy, Vaclav; Gomes, Maria J. M.
Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix // Journal of Applied Physics, 106 (2009), 8; 084319, 6 doi:10.1063/1.3248373 (međunarodna recenzija, članak, znanstveni)


CROSBI ID: 433815 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix

Autori
Buljan, Maja ; Pinto Sara ; Kashtiban, Reza J. ; Rolo, Anabela G. ; Chahboun, A. ; Bangert, Ursel ; Levichev, Sergey ; Holy, Vaclav ; Gomes, Maria J. M.

Izvornik
Journal of Applied Physics (0021-8979) 106 (2009), 8; 084319, 6

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Semiconductor quantum dots ; SiGe ; GISAXS

Sažetak
In this paper, we present a study of structural properties of SiGe quantum dots formed in amorphous silica matrix by magnetron sputtering technique. We investigate deposition conditions leading to the formation of dense and uniformly sized quantum dots, distributed homogeneously in the matrix. X-ray and Raman spectroscopy were used to estimate the Si content. A detailed analysis based on grazing incidence small angle X-ray scattering revealed the influence of the deposition conditions on quantum dot sizes, size distributions, spatial arrangement and concentration of quantum dots in the matrix, as well as the Si:Ge content.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( POIROT)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Maja Mičetić (autor)

Poveznice na cjeloviti tekst rada:

doi aip.scitation.org doi.org

Citiraj ovu publikaciju:

Buljan, Maja; Pinto Sara; Kashtiban, Reza J.; Rolo, Anabela G.; Chahboun, A.; Bangert, Ursel; Levichev, Sergey; Holy, Vaclav; Gomes, Maria J. M.
Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix // Journal of Applied Physics, 106 (2009), 8; 084319, 6 doi:10.1063/1.3248373 (međunarodna recenzija, članak, znanstveni)
Buljan, M., Pinto Sara, Kashtiban, R., Rolo, A., Chahboun, A., Bangert, U., Levichev, S., Holy, V. & Gomes, M. (2009) Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix. Journal of Applied Physics, 106 (8), 084319, 6 doi:10.1063/1.3248373.
@article{article, author = {Buljan, Maja and Kashtiban, Reza J. and Rolo, Anabela G. and Chahboun, A. and Bangert, Ursel and Levichev, Sergey and Holy, Vaclav and Gomes, Maria J. M.}, year = {2009}, pages = {6}, DOI = {10.1063/1.3248373}, chapter = {084319}, keywords = {Semiconductor quantum dots, SiGe, GISAXS}, journal = {Journal of Applied Physics}, doi = {10.1063/1.3248373}, volume = {106}, number = {8}, issn = {0021-8979}, title = {Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix}, keyword = {Semiconductor quantum dots, SiGe, GISAXS}, chapternumber = {084319} }
@article{article, author = {Buljan, Maja and Kashtiban, Reza J. and Rolo, Anabela G. and Chahboun, A. and Bangert, Ursel and Levichev, Sergey and Holy, Vaclav and Gomes, Maria J. M.}, year = {2009}, pages = {6}, DOI = {10.1063/1.3248373}, chapter = {084319}, keywords = {Semiconductor quantum dots, SiGe, GISAXS}, journal = {Journal of Applied Physics}, doi = {10.1063/1.3248373}, volume = {106}, number = {8}, issn = {0021-8979}, title = {Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix}, keyword = {Semiconductor quantum dots, SiGe, GISAXS}, chapternumber = {084319} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati:





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