engleski

Effect of Light and Voltage-Induced Defects on a-Si:H Three-Color Detector Transient Response

We propose an explanation for the characteristic shape of a-Si:H p-i-n transient photoresponse. The transient photocurrent is measured with simultaneous different combinations of basic colors illumination and voltage pulses. The energy distribution of gap states, which contributes to transient response of visible light in the amorphous silicon photodiode, is obtained. From transients and relevant response times of a-Si:H p-i-n photodetector the energy in gap states were analyzed. The obtained results can contribute to the future development of the method for determination of the density of states and their activation energies involved in absorption of a visible light and as new color detection method.

transient response; colour detector; a-Si:H; response times; defects

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