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Nanostructures for the next generation semiconductor devices (CROSBI ID 554343)

Prilog sa skupa u zborniku | sažetak izlaganja sa skupa

Capan, Ivana ; Dubček, Pavo ; Buljan, Maja ; Desnica, Uroš ; Slunjski, Robert ; Krstulović, Nikša ; Kregar, Zlatko ; Milošević, Slobodan ; Radić, Nikola ; Zorc, Hrvoje et al. Nanostructures for the next generation semiconductor devices // Zbronik sažetaka, Croatian-Japanese Workshop on Advanced Materials Science / Gumhalter, Branko ; Tadić, Tonči (ur.). Zagreb, 2009. str. 15-15

Podaci o odgovornosti

Capan, Ivana ; Dubček, Pavo ; Buljan, Maja ; Desnica, Uroš ; Slunjski, Robert ; Krstulović, Nikša ; Kregar, Zlatko ; Milošević, Slobodan ; Radić, Nikola ; Zorc, Hrvoje ; Betti, Tihomir ; Zulim, Ivan ; Pivac, Branko ;

engleski

Nanostructures for the next generation semiconductor devices

In this presentation we shall discuss motivation to study nanostructures and review our recent results obtained in collaboration between several groups. It is clear that properties of nanostructured materials give rise to enhanced properties of various devices. Therefore, it is of great importance to understand the basic properties of such materials. We believe that our expertise acquired in this filed will significantly contribute to the broad fund of knowledge that is a necessary prerequisite for a successful design and engineering of new generation of devices. We shall review several methods we are using to create nanostructures such as PVD on different substrates, magnetron sputtering of superlattices using different materials, and pulsed laser ablation in different atmospheres. We have shown that even macroscopic studies such as XRR provide a valuable information on self-assembly processes[1]. Another key question is self-organization. A full success of the superstructure method for the nanostructures formation is demonstrated although a lot of open questions remain in the spheres of structural decomposition, diffusion and self-assembly. It is clear that more detailed knowledge on the interplay of defects and self-assembly process is required. It will be shown that in specific cases a high degree of self-assembly can be obtained which means that an expensive lithography steps in processing could be avoided[2]. Further details on structural. optical and electric properties will be presented and discussed. [1] I. Kovačević, B. Pivac, P. Dubček, H. Zorc, N. Radić, S. Bernstorff, M. Campione, and A. Sassella, Appl. Surf. Sci., 253, 3034-3040 (2007). [2] B. Pivac, P. Dubček, I. Capan, I. Zulim, T. Betti, H. Zorc, S. Bernstorff, J. Nanosci. Nanotechnol., 9, 3853-3857 (2009). [3] M. Buljan, U.V. Desnica, M. Ivanda, N. Radić, P. Dubček, G. Dražić, K. Salamon, S. Bernstorff, V. Holy, Physical Review B, 79 (2009) , 3 ; 035310-035321.

nanostructures; nanotechnology; semiconductor devices

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Podaci o prilogu

15-15.

2009.

objavljeno

Podaci o matičnoj publikaciji

Zbronik sažetaka, Croatian-Japanese Workshop on Advanced Materials Science

Gumhalter, Branko ; Tadić, Tonči

Zagreb:

Podaci o skupu

Croatian-Japanese Workshop on Advanced Materials Science

predavanje

29.06.2009-30.06.2009

Zagreb, Hrvatska

Povezanost rada

Fizika, Elektrotehnika