engleski

Crystal structure of defect-containing semiconductor nanocrystals - an X-ray diffraction study

Defects of crystal structure in semiconductor nanocrystals embedded in an amorphous matrix are studied by X-ray diffraction and a full-profile analysis of the diffraction curves based on the Debye formula. A new theoretical model is proposed, describing the diffraction from randomly distributed intrinsic and extrinsic stacking faults and twin blocks in the nanocrystals. The application of the model to full-profile analysis of experimental diffraction curves enables the determination of the concentrations of individual defect types in the nanocrystals. The method has been applied for the investigation of selforganized Ge nanocrystals in an SiO2 matrix, and the dependence of the structure quality of the nanocrystals on their deposition and annealing parameters was obtained.

plane defects ; nanocrystals ; semiconductors ; X-ray diffraction modelling

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