engleski

Electronic properties of hydrogen-doped (Zr803d20)1-xHx (3d = Fe, Co, Ni) metallic glasses

The electrical resistivities of hydrogen-doped (Zr803d20)1-xHx (3d = Ni, Co, Fe) metallic glasses have been measured at temperatures between 2 K and 290 K. The increase of the room-temperature resistivity and its temperature coefficient are explained as a consequence of increased disorder due to hydrogen-doping. The temperature dependence of the resistivity has been analysed using theoretical models of weak-localisation and electron-electron interaction in disordered three-dimensional conductors. The hydrogen dopant is found to reduce effective electron diffusion constant, D, the spin-orbit scattering rate,so, the superconducting transition temperature, Tc, and broadens the superconducting transition region. We discuss the effects of different hydrogen environments on Tc of (Zr803d20)1-xHx metallic glasses.

electronic properties; disordered metals; quantum localization; superconductivity

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