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Formation of Ge-nanocrystals in SiO2 matrix by magnetron sputtering and post-deposition thermal treatment (CROSBI ID 763799)

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Desnica, Uroš V. ; Salamon, Krešimir ; Buljan, Maja ; Dubček, Pavo ; Radić, Nikola ; Desnica-Franković, I.D. ; Siketić, Zdravko ; Bogdanović-Radović, Ivančica ; Ivanda, Mile ; Bernstorff, Sigrid Formation of Ge-nanocrystals in SiO2 matrix by magnetron sputtering and post-deposition thermal treatment // Annual Report 2007, Austrian SAXS Beamline at Elettra. 2007.

Podaci o odgovornosti

Desnica, Uroš V. ; Salamon, Krešimir ; Buljan, Maja ; Dubček, Pavo ; Radić, Nikola ; Desnica-Franković, I.D. ; Siketić, Zdravko ; Bogdanović-Radović, Ivančica ; Ivanda, Mile ; Bernstorff, Sigrid

engleski

Formation of Ge-nanocrystals in SiO2 matrix by magnetron sputtering and post-deposition thermal treatment

Ge quantum dots were formed in SiO2 by magnetron sputtering co-deposition, either in a form of thick films or as multilayered films consisiting 20 bilayers.

Ge-nanocrystals ; SiO2 matrix ; magnetron sputtering ; thermal treatment

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Podaci o izdanju

Annual Report 2007, Austrian SAXS Beamline at Elettra

2007.

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objavljeno

Povezanost rada

Fizika