Charge collection efficiency mapping of interdigitated 4H-SiC detectors (CROSBI ID 152285)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Vittone, E. ; Skukan, Natko ; Pastuović, Željko ; Olivero, P. ; Jakšić, Milko
engleski
Charge collection efficiency mapping of interdigitated 4H-SiC detectors
The Ion Beam Induced Charge (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact). These different experimental conditions have been modeled using a two-dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent agreement between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.
IBIC ; silicon carbide detector ; charge collection efficiency
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Podaci o izdanju
267 (12/13)
2009.
2197-2202
objavljeno
0168-583X
10.1016/j.nimb.2009.03.054