engleski

Characterisation of nitrogen-related defects in compound semiconductors by near- edge x-ray absorption fine structure

We have used synchrotron-based near-edge x-ray absorption fine structure (NEXAFS) spectroscopy to study the electronic structure of nitrogen-related defects in several compound semiconductors, such as GaN, InN, GaSb and InSb. Several defect levels within the band gap or the conduction band were clearly resolved in NEXAFS spectra around the nitrogen K-edge. We attribute these levels to interstitial or antisite nitrogen. A sharp resonance above the conduction band minimum observed from all samples under consideration was attributed to molecular nitrogen, in full agreement with the vibrational fine structure of the N 1s→ 1π * resonance in N2.

NEXAFS; semiconductors; defects

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