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The transient behaviour and charge analysis of np silicon colour detector

Based on np silicon, a colour detectors enables the detection of three fundamental components of visible light in one single pixel of a sensor array. Sensitivity for the blue, green and red components of light is achieved through switching the bias voltage applied to the devices. Switching the bias voltage, simulation under different monochromatic and chromatic illumination are carried out to investigate the time dependent behavior of the photocurrent. The quasi-neutral charge density and space-charge density components are analysed under basic monochromatic and chromatic illumination respectively. The transient response after bias switching depends on the trapped charge and photogenerated charge in the devices. The numerical simulation results show that the diffusion charge of chromatic light is equal to the sum of diffusion charges of basic monochromatic light components. Furthermore, the depletion charge of chromatic light is smaller than depletion charges of basic monochromatic light components. Optimum switching voltages are determined on the bases of transient bahaviour.

colour detection; charge analysis

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