Thermionic Emission Process in Carrier Transport in pn Homojunctions (CROSBI ID 473282)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Biljanović, Petar ; Suligoj, Tomislav
engleski
Thermionic Emission Process in Carrier Transport in pn Homojunctions
Thermionic emission is treated in pn homojunctions. Thermionic current over pn junction barrier is derived directly from Maxwell-Boltzmann distribution function as a difference between the majority carrier flow and the flow of excess carriers in the opposite direction. It is shown that the excess carrier concentration is determined as an equilibrium between thermionic and diffusion process, which depends on quasi-neutral regions. Such an approach enables the determination of boundary condition for any doping profile.
thermionic emission; Maxwell-Boltzmann distribution function; quasi-neutral region; doping profile
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Podaci o prilogu
248-251-x.
2000.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of MELECON 2000, Vol. I
Economides, Costas ; Pattichis, Constantinos S. ; Maliotis, Greg
Limassol: Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
MEleCon 2000 - 10 th Mediterranean Electrotechnical Conference
predavanje
29.05.2000-31.05.2000
Nikozija, Cipar