engleski

Voltage and Concentration Dependance of High Frequency Parameters of Narrow Base Bipolar Transistors

The decrease in size of modern bipolar transistors changes the influence of different device areas on transistor performance. In this paper the effects of different collector dopings and different bias voltages in the normal active region on the current gain cut-off frequency and the maximum frequency of oscillations of a small bipolar test structure are investigated using a device simulation software.

bipolar transistor; cut-off frequency; maximum frequency of oscillations; base pushout

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