engleski

Mesh Structure Adjustment in 2D Simulation of VLSI Super Self-Aligned Si Bipolar Transistor

A fabrication process of high-speed, deep-trench, double polysilicon super self-aligned silicon bipolar transistor is simulated by 2D simulation program, assuming 0,25 *m design rules. The effect of simulation mesh on doping profiles of intrinsic and extrinsic transistor, deposited layers and electrical characteristics simulation model are analyzed.

fabrication process; super self-aligned silicon bipolar transistor; 2D simulation program; simulation mesh

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