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Pregled bibliografske jedinice broj: 397927

Electrical activation of phosphorus by rapid thermal annealing of doped amorphous silicon films


Žonja, Sanja; Ivanda, Mile; Očko, M.; Biljanović, Petar; Suligoj, Tomislav; Koričić, Marko; Mochizuki, H.; Morita, S.; Shinomura, K.; Imai, H.
Electrical activation of phosphorus by rapid thermal annealing of doped amorphous silicon films // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Croatian Society for Information and Communication Technology, Electronics and Microelectronics - MIPRO, 2009. str. 46-51 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


CROSBI ID: 397927 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Electrical activation of phosphorus by rapid thermal annealing of doped amorphous silicon films

Autori
Žonja, Sanja ; Ivanda, Mile ; Očko, M. ; Biljanović, Petar ; Suligoj, Tomislav ; Koričić, Marko ; Mochizuki, H. ; Morita, S. ; Shinomura, K. ; Imai, H.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj - Rijeka : Croatian Society for Information and Communication Technology, Electronics and Microelectronics - MIPRO, 2009, 46-51

ISBN
978-953-233-044-1

Skup
32nd International Convention MIPRO 2009

Mjesto i datum
Opatija, Hrvatska, 25-29.05.2009

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
LPCVD; amorphous silicon; polysilicon; phosphorus doping. rapid thermal annealing

Sažetak
Heavily phosphorus doped amorphous and polycrystalline silicon samples were prepared by the LPVCD (low pressure chemical vapour deposition) method at different deposition temperatures. Thereafter, samples were subjected to RTA (rapid thermal annealing) at 950 °C in different time intervals (10, 20, 30 and 45 s). In this way the structure of amorphous samples changed to polycrystalline and in all annealed samples the phosphorus electrical activation was achieved and defect density was reduced. Sheet resistance, although clearly decreasing with the RTA duration, does not significantly change with the annealing time. This behaviour can be ascribed to the high quantity of dopant concentration when the resistivity of polycrystalline silicon approaches the one of monocrystalline silicon and finally its limiting value. By analyzing the Fano type resonance on the transversal optical TO(Γ ) phonon mode, Raman spectroscopy served as a tool for distinguishing between the accumulation of the activated phosphorus atoms at the grain boundaries and inside the grains. The spectrum of the amorphous sample which was subjected to the longest annealing time reveals a shift and asymmetry of the same peak characteristic to the Fano interaction.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



POVEZANOST RADA


Projekt / tema
035-0352827-2841 - Materijali sa elektronskom strukturom modeliranom modernim tehnikama priprave (Aviani, Ivica, MZOS - )
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZOS - )
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Ivanda, Mile, MZOS - )

Ustanove
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb

Citiraj ovu publikaciju

Žonja, Sanja; Ivanda, Mile; Očko, M.; Biljanović, Petar; Suligoj, Tomislav; Koričić, Marko; Mochizuki, H.; Morita, S.; Shinomura, K.; Imai, H.
Electrical activation of phosphorus by rapid thermal annealing of doped amorphous silicon films // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Croatian Society for Information and Communication Technology, Electronics and Microelectronics - MIPRO, 2009. str. 46-51 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Žonja, S., Ivanda, M., Očko, M., Biljanović, P., Suligoj, T., Koričić, M., Mochizuki, H., Morita, S., Shinomura, K. & Imai, H. (2009) Electrical activation of phosphorus by rapid thermal annealing of doped amorphous silicon films. U: Biljanović, P. & Skala, K. (ur.)Proceedings of 32nd International Convention MIPRO 2009.
@article{article, year = {2009}, pages = {46-51}, keywords = {LPCVD, amorphous silicon, polysilicon, phosphorus doping. rapid thermal annealing}, isbn = {978-953-233-044-1}, title = {Electrical activation of phosphorus by rapid thermal annealing of doped amorphous silicon films}, keyword = {LPCVD, amorphous silicon, polysilicon, phosphorus doping. rapid thermal annealing}, publisher = {Croatian Society for Information and Communication Technology, Electronics and Microelectronics - MIPRO}, publisherplace = {Opatija, Hrvatska} }




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