Low pressure chemical vapor deposition of thin SiOx films in oxygen and nitrogen atmospheres (CROSBI ID 548699)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Vilman, Viktor ; Ristić, Davor ; Ivanda, Mile ; Biljanović, Petar ; Gamulin, Ozren ; Furić, Krešimir ; Ristić, Mira ; Musić, Svetozar
engleski
Low pressure chemical vapor deposition of thin SiOx films in oxygen and nitrogen atmospheres
The silicon rich oxide (SiOx) thin films were prepared in the LPCVD reactor, by thermal oxidation of silane in oxygen atmosphere and in nitrous oxide atmosphere. The stechiometry coefficient x was controlled by the substrate temperature and the ratio of the partial pressures of silane and oxidants O2 and N2O. The structural and optical properties of prepared SiOx films were analyzed by infrared spectroscopy, Raman spectroscopy and scanning electron microscopy.
LPCVD; silicon rich oxide; oxygen atmosphere; nitrogen atmosphere
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
41-45.
2009.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of 32nd International Convention MIPRO 2009
Biljanović, Petar ; Skala, Karolj
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO
978-953-233-044-1
Podaci o skupu
32nd International Convention MIPRO 2009
predavanje
25.05.2009-29.05.2009
Opatija, Hrvatska
