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Intrinsic point defects in polycrystalline silicon (CROSBI ID 86414)

Prilog u časopisu | izvorni znanstveni rad

Pivac, Branko ; Borjanović, Vesna ; Kovačević, Ivana Intrinsic point defects in polycrystalline silicon // Fizika A, 9 (2000), 1; 37-46

Podaci o odgovornosti

Pivac, Branko ; Borjanović, Vesna ; Kovačević, Ivana

engleski

Intrinsic point defects in polycrystalline silicon

The behavior of intrinsic point defects in silicon is still an unresolved problem. As they interact with other impurities and influnece their diffusion intrinsic point defects therefore, affect electronic properties of material. Of particular importance is intrinsic point defect behavior in polycrystalline silicon due to the presence of very high concentration of structural defects, such as dislocations and grain boundaries of various kinds. A direct observation of point defects is very difficult and therefore it is shown that monitoring of carbon concentration is a very good measure of present point defects behavior. Polycrystalline material supersaturated with carbon presents a particular case when self-interstitials and vacancies generation is significantly retarded up to the highest temperatures, leading therefore to preservation of carbon supersaturation upon thermal treatments.

polycrystalline silicon ; intrinsic point defects ; interaction with other impurities ; electronic properties

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Podaci o izdanju

9 (1)

2000.

37-46

objavljeno

1330-0008

1333-9125

Povezanost rada

Fizika

Poveznice