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Pregled bibliografske jedinice broj: 386662

Structural, optical and electrical characterization of porous silicon prepared on thin silicon epitaxial layer


Balarin, Maja; Gamulin, Ozren; Ivanda, Mile; Kosović, Marin; Ristić, Davor; Ristić, Mira; Musić, Svetozar; Furić, Krešimir; Krilov, Dubravka; Brnjas-Kraljević, Jasminka
Structural, optical and electrical characterization of porous silicon prepared on thin silicon epitaxial layer // Journal of molecular structure, 924-926 (2009), 285-290 doi:10.1016/j.molstruc.2008.10.045 (međunarodna recenzija, članak, znanstveni)


CROSBI ID: 386662 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Structural, optical and electrical characterization of porous silicon prepared on thin silicon epitaxial layer

Autori
Balarin, Maja ; Gamulin, Ozren ; Ivanda, Mile ; Kosović, Marin ; Ristić, Davor ; Ristić, Mira ; Musić, Svetozar ; Furić, Krešimir ; Krilov, Dubravka ; Brnjas-Kraljević, Jasminka

Izvornik
Journal of molecular structure (0022-2860) 924-926 (2009); 285-290

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
porous Si; silicon-on insulator; IR and Raman spectroscopy; SEM

Sažetak
Silicon-on insulator (SOI) wafers, consisting of 22 μ m thick p-type silicon epitaxial layer grown on 280 μ m thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obtained by etching at different time duration, from 10 to 80 min, using the constant concentration of 48% HF in ethanol solution. The structural and optical properties of porous layers were investigated by Raman, FTIR and photoluminescence (PL) spectroscopy, and scanning electron microscopy. SEM images showed high density of micrometer-sized pores whose morphology and density depended on the etching duration. For all samples the observed PL peak is in the visible spectral range. The intensity of the PL peak was increased with the etching time. The exception was the epitaxial layer of the sample etched for 80 min. It showed the strong decrease in the PL peak intensity. For this sample the insulator layer was completely etched out and the epitaxial layer was detached from the substrate. Fine nanometer-sized pores with the strong photoluminescence were observed in the substrate layer. The fine silicon nanostructure was confirmed by the broadening and the red-shift of crystalline silicon TO(Γ ) vibrational band that indicates a strong phonon confinement.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija



POVEZANOST RADA


Projekti:
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Ivanda, Mile, MZOS ) ( POIROT)
098-0982904-2952 - Sinteza i mikrostruktura metalnih oksida i oksidnih stakala (Ristić, Mira, MZOS ) ( POIROT)
108-1080134-3105 - Mehanizmi narušavanja strukture lipoproteina djelovanjem vanjskih čimbenika (Gamulin, Ozren, MZOS ) ( POIROT)

Ustanove:
Institut "Ruđer Bošković", Zagreb,
Medicinski fakultet, Zagreb

Poveznice na cjeloviti tekst rada:

doi www.sciencedirect.com

Citiraj ovu publikaciju:

Balarin, Maja; Gamulin, Ozren; Ivanda, Mile; Kosović, Marin; Ristić, Davor; Ristić, Mira; Musić, Svetozar; Furić, Krešimir; Krilov, Dubravka; Brnjas-Kraljević, Jasminka
Structural, optical and electrical characterization of porous silicon prepared on thin silicon epitaxial layer // Journal of molecular structure, 924-926 (2009), 285-290 doi:10.1016/j.molstruc.2008.10.045 (međunarodna recenzija, članak, znanstveni)
Balarin, M., Gamulin, O., Ivanda, M., Kosović, M., Ristić, D., Ristić, M., Musić, S., Furić, K., Krilov, D. & Brnjas-Kraljević, J. (2009) Structural, optical and electrical characterization of porous silicon prepared on thin silicon epitaxial layer. Journal of molecular structure, 924-926, 285-290 doi:10.1016/j.molstruc.2008.10.045.
@article{article, year = {2009}, pages = {285-290}, DOI = {10.1016/j.molstruc.2008.10.045}, keywords = {porous Si, silicon-on insulator, IR and Raman spectroscopy, SEM}, journal = {Journal of molecular structure}, doi = {10.1016/j.molstruc.2008.10.045}, volume = {924-926}, issn = {0022-2860}, title = {Structural, optical and electrical characterization of porous silicon prepared on thin silicon epitaxial layer}, keyword = {porous Si, silicon-on insulator, IR and Raman spectroscopy, SEM} }
@article{article, year = {2009}, pages = {285-290}, DOI = {10.1016/j.molstruc.2008.10.045}, keywords = {porous Si, silicon-on insulator, IR and Raman spectroscopy, SEM}, journal = {Journal of molecular structure}, doi = {10.1016/j.molstruc.2008.10.045}, volume = {924-926}, issn = {0022-2860}, title = {Structural, optical and electrical characterization of porous silicon prepared on thin silicon epitaxial layer}, keyword = {porous Si, silicon-on insulator, IR and Raman spectroscopy, SEM} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Uključenost u ostale bibliografske baze podataka::


  • INSPEC
  • MEDLINE


Citati:





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