engleski

EPR study of He implanted Si

We studied, with electron paramagnetic resonance, the influence of thermal treatment on defect evolution in helium implanted Czochralski single crystal silicon. It is shown that thermal treatment induces helium migration and capturing by vacancy clusters that transforms into pressurized bubbles. Such transformation produced strain field, that in turn affects dangling bond's lineshape in its vicinity. It is shown that strain field causes asymmetry of dangling bonds lineshape that is proportional to the strain field. This selects the electron paramagnetic resonance as a convenient technique for the monitoring of the early phases of bubbles formation.

silicon; defects; implantation

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