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Pregled bibliografske jedinice broj: 38040

GISAXS study of defects in He implanted silicon


Dubček, Pavo; Milat, Ognjen; Pivac, Branko; Bernstorff, S.; Amenitsch, H.; Tonini, R.; Corni, F.; Ottaviani, G.
GISAXS study of defects in He implanted silicon // Materials science and engineering B : solid state materials for advanced technology, 71 (2000), Special issue SI; 82-86 (međunarodna recenzija, članak, znanstveni)


Naslov
GISAXS study of defects in He implanted silicon

Autori
Dubček, Pavo ; Milat, Ognjen ; Pivac, Branko ; Bernstorff, S. ; Amenitsch, H. ; Tonini, R. ; Corni, F. ; Ottaviani, G.

Izvornik
Materials science and engineering B : solid state materials for advanced technology (0921-5107) 71 (2000), Special issue SI; 82-86

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Defects; He implantation; small angle X-ray scattering

Sažetak
The modifications induced in single-crystal silicon by implanted helium have been investigated by grazing incidence small angle X-ray scattering technique. The samples prepared by implanting 2´1016 cm-2 helium ions at 20 keV in silicon wafers held at 77 K were thermally treated for 2 h in the 100-800°C temperature range. It is shown that implantation produced a film with slightly lower density than that of undamaged single crystal silicon. Further thermal treatment caused shrinking of the film leaving well ordered subsurface layer and damaged film below. Upon annealing at 600°C this structure apparently disappear, to be formed again upon annealing at 800°C.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
00350105
00980301

Ustanove
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus