A multi-technique study of gold oxidation and semiconducting properties of the compact alfa-oxide layer (CROSBI ID 147092)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Petrović, Željka ; Metikoš-Huković, Mirjana ; Babić, Ranko ; Katić, Jozefina ; Milun, Milorad
engleski
A multi-technique study of gold oxidation and semiconducting properties of the compact alfa-oxide layer
The initial stage of gold oxidation at the quartz crystal electrode in a near neutral solution was studied by using potentiostatic and potentiodynamic sweep methods. The underpotential deposition of OH radicals was the first stage of the nucleation and formation of the phase oxide Au2O3. The composition of the oxide was determined by the X-ray photoemission spectroscopy (XPS). Three-dimensional (3D) progressive nucleation occurred under diffusion control. The electronic structure of the compact alfa-oxide film and the charge distribution at the oxide layer / electrolyte interface were examined using photopotential and capacitance measurements. Anodically formed oxide film on gold was highly-doped defect semiconductor of n-type conductivity.
electrooxidation of gold; Underpotential Deposition (UPD) of OH radicals; semiconducting properties; electrochemical ac/dc techniques; EQCN; XPS
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Podaci o izdanju
629 (1-2)
2009.
43-49
objavljeno
1572-6657
10.1016/j.jelechem.2009.01.020