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Influence of deposition temperature on correlation of Ge quantum dots positions in amorphous silica matrix (CROSBI ID 146624)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Buljan, Maja ; Desnica, Uroš V. ; Dražić, Goran ; Ivanda, Mile ; Radić, Nikola ; Dubček, Pavo ; Salamon, Krešimir ; Bernsdorff, Sigrid ; Holy, Vaclav Influence of deposition temperature on correlation of Ge quantum dots positions in amorphous silica matrix // Nanotechnology, 20 (2009), 8; 085612-085618. doi: 10.1088/0957-4484/20/8/085612

Podaci o odgovornosti

Buljan, Maja ; Desnica, Uroš V. ; Dražić, Goran ; Ivanda, Mile ; Radić, Nikola ; Dubček, Pavo ; Salamon, Krešimir ; Bernsdorff, Sigrid ; Holy, Vaclav

engleski

Influence of deposition temperature on correlation of Ge quantum dots positions in amorphous silica matrix

We studied structural properties of (Ge+SiO2)/SiO2 multilayer films especially the influence of the deposition temperature and the parameters of subsequent annealing on the formation and spatial correlation of Ge quantum dots in amorphous silica matrix. We showed that in-layer and inter-layer spatial correlations of the formed Ge quantum dots strongly depend on the deposition temperature. For suitable chosen deposition parameters, highly correlated dot positions in all three dimensions can be obtained. It is demonstrated that the degree of the spatial correlation of quantum dots influences the size distribution width, which further affects the macroscopic properties of the quantum dot arrays.

(Ge+SiO2)/SiO2 multilayer films; spatial correlation of quantum dots

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Podaci o izdanju

20 (8)

2009.

085612-085618

objavljeno

0957-4484

10.1088/0957-4484/20/8/085612

Povezanost rada

Fizika

Poveznice
Indeksiranost