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Pregled bibliografske jedinice broj: 377070

Grazing incidence X-ray study of Ge-nanoparticle formation in (Ge:SiO2)/SiO2 multilayers


Salamon, Krešimir; Milat, Ognjen; Buljan, Maja; Desnica, Uroš; Radić, Nikola; Dubček, Pavo; Bernstorff, Siegrid
Grazing incidence X-ray study of Ge-nanoparticle formation in (Ge:SiO2)/SiO2 multilayers // Thin Solid Films, 517 (2009), 6; 1899-1903 doi:10.1016/j.tsf.2008.09.098 (međunarodna recenzija, članak, znanstveni)


Naslov
Grazing incidence X-ray study of Ge-nanoparticle formation in (Ge:SiO2)/SiO2 multilayers

Autori
Salamon, Krešimir ; Milat, Ognjen ; Buljan, Maja ; Desnica, Uroš ; Radić, Nikola ; Dubček, Pavo ; Bernstorff, Siegrid

Izvornik
Thin Solid Films (0040-6090) 517 (2009), 6; 1899-1903

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Germanium; multilayer; GISAXS; diffraction

Sažetak
We present the study of formation of Ge-nanoparticles (Ge-NP) in germanosilicate (Ge:SiO2) multilayer (ML) films under thermal treatment. In anticipation of controllable formation of Ge-NP, ML films were prepared by magnetron deposition at room temperature as 20 bi-layer stacks, each bi-layer comprised of a 7 nm thick layer of (Ge+SiO2) (molar ratio: 60:40) succeeded by a 7 nm thick layer of pure SiO2, and then annealed for 1 h, up to Ta=900 °C. Formation and morphology of Ge-NP were analyzed by combining the information obtained from the grazing incidence small angle X-ray scattering and X-ray diffraction. It was found that precipitation of Ge-NP starts at Ta=600 °C, while high degree of in-plane confinement and lateral ordering of rather uniform precipitated particles is achieved at Ta= 700?800 °C range. At still higher annealing temperature Ta>800 °C, volume fraction of precipitated Ge-NP in SiO2 matrix diminishes due to the outdiffusion of Ge atoms from the film, while Ge-NP are no more well confined to (Ge+SiO2) layers.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
035-0352843-2844 - Veza strukturnih i fizikalnih svojstava materijala kontrolirane dimenzionalnosti (Ognjen Milat, )
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )
098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Nikola Radić, )
098-0982886-2897 - Poluvodički materijali za optoelektroniku i nanotehnologiju (Branko Šantić, )

Ustanove
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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