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Mechanism of Raman scattering in amorphous silicon


Ivanda, Mile; Gamulin, Ozren; Kiefer, Wolfgang
Mechanism of Raman scattering in amorphous silicon // Journal of molecular structure, 481 (1999), Special issue SI; 651-655 (međunarodna recenzija, članak, znanstveni)


Naslov
Mechanism of Raman scattering in amorphous silicon

Autori
Ivanda, Mile ; Gamulin, Ozren ; Kiefer, Wolfgang

Izvornik
Journal of molecular structure (0022-2860) 481 (1999), Special issue SI; 651-655

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Amorphous silicon; scattering mechanisms; Boson peak; Raman

Sažetak
The Raman spectra of various amorphous silicon samples (a-Si, a-Si:H and a-Si1-xCx:H) were carefully examined by consideration of the spectrometer transmission function, the background correction, and the Bose-Einstein temperature correction factor. Separating the contributions of the polarizabilities <(alpha)over left right arrow>(1), <(alpha)over left right arrow>(2) and <(alpha)over left right arrow>(3) defined by Alben et al. [R. Alben, D. Weaire, J.E. Smith Jr., M.H. Brodsky, Phys. Rev. 11 (1975) 2271], we have shown that in the Raman scattering process only the components <(alpha)over left right arrow>(1) and <(alpha)over left right arrow>(3) contribute to Raman scattering for all types of amorphous silicon we examined.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
00980303

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus