Realization of defect-free epitaxial core-shell GAAs/AlGaAs nanowire heterostructures (CROSBI ID 145073)
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Tambe, Michael J. ; Lim, Sung Keun ; Smith, Matthew J. ; Allard, Lawrence F. ; Gradečak, Silvija
engleski
Realization of defect-free epitaxial core-shell GAAs/AlGaAs nanowire heterostructures
We report the controlled growth of vertically aligned GaAs/AlGaAs core-shell nanowires. By optimizing the shell deposition temperature and catalyst density we maintain high temperature stability and achieve defect-free epitaxial AlGaAs shell deposition with high aluminum incorporation. Energy dispersive x-ray analysis determines the shell composition to be Al0.9Ga0.1As and measures the uniformity of the shell thickness. Lattice-resolved high-angle annular dark-field scanning transmission electron microscopy images confirm the core-shell interface to be defect-free, epitaxial, and atomically sharp. The ability to realize GaAs/AlGaAs core-shell nanowires with precise control over the morphology and composition is essential to the development of nanowire-based high mobility electronics.
epitaxial core shell; GaAs/AlGaAs; nanowire heterostructures
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