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Stopping power of different ions in Si measured with a bulk sample method and Bayesian inference data analysis

The accuracy of ion beam analysis experiments depends critically on the stopping power values available. While for H and He ions accuracies normally better than 5% are achieved by usual interpolative schemes such as SRIM, for heavier ions the accuracy is worse. One of the main reasons is that the experimental data bases are very sparse, even for important materials such as Si. New measurements are therefore needed. Measurement of stopping power is often made with transmission in thin films, with the usual problems of film thickness homogeneity. We have previously developed an alternative method based on measuring bulk spectra, and fitting the yield by treating the stopping power as a fit parameter in a Bayesian inference Markov chain Monte Carlo procedure included in the standard IBA code NDF. We report on improvements of the method and on its application to the determination of the stopping power of 7Li in Si. To validate the method, we also apply it to the stopping of 4He in Si, which is known with 2% accuracy.

electronic stopping ; RBS ; silicon

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