Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 367069

Thermoelectric properties of the LPCVD obtained Si:B thin films


Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Biljanović, Petar
Thermoelectric properties of the LPCVD obtained Si:B thin films // ARW Workshop on Properties and Applications of Thermoelectric Materials and Conference on Concepts in Electron Correlation
Hvar, Hrvatska, 2008. (poster, nije recenziran, sažetak, znanstveni)


CROSBI ID: 367069 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Thermoelectric properties of the LPCVD obtained Si:B thin films

Autori
Žonja, Sanja ; Očko, Miroslav ; Ivanda, Mile ; Biljanović, Petar

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Skup
ARW Workshop on Properties and Applications of Thermoelectric Materials and Conference on Concepts in Electron Correlation

Mjesto i datum
Hvar, Hrvatska, 20-30.09.2008

Vrsta sudjelovanja
Poster

Vrsta recenzije
Nije recenziran

Ključne riječi
Si:B thin films; LPCVD; thermoelectric properties

Sažetak
LPCVD (low pressure chemical vapour deposition) was used for preparation of thin heavily boron δ -doped polysilicon samples. Investigated samples were deposited in the horizontal reactor at 750ºC for 1 hr and thereafter thermally annealed in the diffusion furnace at 1200ºC (also for 1 hr). Obtained samples had very low sheet resistances. Comprehensive Raman spectroscopy gave insight into the structure and boron concentration of polysilicon samples. Resistivity measurements revealed metallic behavior from the room temperature down to 2 K with T <sup>1/2</sup> dependence in an unusually wide temperature range (from 2 to 80K). In the whole temperature range measured thermopower data show metallic behavior as well and are linear above 120K. However, the thermopower values are rather high, even higher than the theory predicts for ordinary metals. In spite of the high thermopower and low resistance obtained, thermoelectric characteristics of the investigated Si:B are still not good enough for applications in thermoelectric devices.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



POVEZANOST RADA


Projekt / tema
035-0352827-2841 - Materijali sa elektronskom strukturom modeliranom modernim tehnikama priprave (Ivica Aviani, )
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Marko Koričić, )

Ustanove
Institut za fiziku, Zagreb,
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Mile Ivanda (autor)

Avatar Url Miroslav Očko (autor)

Avatar Url Petar Biljanović (autor)

Avatar Url Sanja Žonja (autor)

Citiraj ovu publikaciju

Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Biljanović, Petar
Thermoelectric properties of the LPCVD obtained Si:B thin films // ARW Workshop on Properties and Applications of Thermoelectric Materials and Conference on Concepts in Electron Correlation
Hvar, Hrvatska, 2008. (poster, nije recenziran, sažetak, znanstveni)
Žonja, S., Očko, M., Ivanda, M. & Biljanović, P. (2008) Thermoelectric properties of the LPCVD obtained Si:B thin films. U: ARW Workshop on Properties and Applications of Thermoelectric Materials and Conference on Concepts in Electron Correlation.
@article{article, year = {2008}, keywords = {Si:B thin films, LPCVD, thermoelectric properties}, title = {Thermoelectric properties of the LPCVD obtained Si:B thin films}, keyword = {Si:B thin films, LPCVD, thermoelectric properties}, publisherplace = {Hvar, Hrvatska} }




Contrast
Increase Font
Decrease Font
Dyslexic Font