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Thermoelectric properties of the LPCVD obtained Si:B thin films

LPCVD (low pressure chemical vapour deposition) was used for preparation of thin heavily boron δ -doped polysilicon samples. Investigated samples were deposited in the horizontal reactor at 750ºC for 1 hr and thereafter thermally annealed in the diffusion furnace at 1200ºC (also for 1 hr). Obtained samples had very low sheet resistances. Comprehensive Raman spectroscopy gave insight into the structure and boron concentration of polysilicon samples. Resistivity measurements revealed metallic behavior from the room temperature down to 2 K with T ^1/2 dependence in an unusually wide temperature range (from 2 to 80K). In the whole temperature range measured thermopower data show metallic behavior as well and are linear above 120K. However, the thermopower values are rather high, even higher than the theory predicts for ordinary metals. In spite of the high thermopower and low resistance obtained, thermoelectric characteristics of the investigated Si:B are still not good enough for applications in thermoelectric devices.

Si:B thin films; LPCVD; thermoelectric properties

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